| PART |
Description |
Maker |
| IXTY64N055T IXTP64N055T |
N-Channel Enhancement Mode Avalanche Rated
TrenchMV Power MOSFET N-Channel EngancementMode Avalanche Rated
|
IXYS Corporation
|
| STP60NF03L06 STP60NF03L |
60 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 30V - 0.008ヘ - 60A TO-220 STripFET⑩ Power MOSFET
N-channel 30V - 0.008Ω - 60A TO-220 STripFET Power MOSFET
N-channel 30V - 0.008Ω - 60A TO-220 STripFET?/a> Power MOSFET
|
STMicroelectronics
|
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BUZ103S Q67040-S4009-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)
|
Infineon
Siemens Semiconductor Group
SIEMENS AG
|
| SPD07N20 SPD07N20G SPD07N2008 SPU07N20G SPD07N20GX |
SIPMOS? Power Transistor Features N channel Enhancement mode Avalanche rated
SIPMOSò Power Transistor Features N channel Enhancement mode Avalanche rated
7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
Infineon Technologies AG
|
| IRF1310NS |
Fully Avalanche Rated
|
Kersemi Electronic Co.,...
|
| IRFD9024 |
Repetitive Avalanche Rated
|
Vishay Siliconix
|
| IRFL9014 |
Repetitive Avalanche Rated
|
Kersemi Electronic Co.,...
|
| UT60N03L-TN3-T UT60N03L-TN3-R UT60N03L-TM3-T UT60N |
30V, 60A N-CHANNEL LOGIC LEVEL MOSFET
|
Unisonic Technologies
|
